MEMÓRIA RAM 8GB DDR3 1600MHZ EM PALHOÇA

DDR3L-1600 CL11 SDRAM ? JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply ? VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) ? 800MHz fCK for 1600Mb/sec/pin ? 8 independent internal bank ? Programmable CAS Latency: 11, 10, 9, 8, 7, 6 ? Programmable Additive Latency: 0, CL - 2, or CL - 1 clock ? 8-bit pre-fetch ? Burst Length: 8 (Interleave without any limit, sequential with starting address ?000? only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] ? Bi-directional Differential Data Strobe ? Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) ? On Die Termination using ODT pin ? On-DIMM thermal sensor (Grade B) ? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C ? Asynchronous Reset ? PCB: Height 1.180? (30.00mm), double sided component